* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
* High performance trench technology for extremely low rDS(on.

* Primary DC-DC Switch
* Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID.

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications
* Primary DC-DC Switch
* Load Switch MOSFET Maximum Rat.

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